IRF9Z24N mosfet

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance
in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z24NL) is available for
low-profile applications.

Features

Advanced Process Technology
Surface Mount (IRF9Z24NS)
Low-profile through-hole (IRF9Z24NL)
175°C Operating Temperature
P-Channel
Fast Switching
Fully Avalanche Rated